MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen.
By: Chen, Jr-Tai [author.].
Contributor(s): Semiconductor Materials Division. Department of Physics, Chemistry, and Biology. Link�oping University [issuing body.].
Material type:![materialTypeLabel](/opac-tmpl/lib/famfamfam/BK.png)
Item type | Current location | Collection | Call number | URL | Copy number | Status | Date due | Item holds |
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IUKL Library | Subscripti | https://ebookcentral.proquest.com/lib/kliuc-ebooks/detail.action?docID=3328196 | 1 | Available |
Total holds: 0
Includes bibliographical references.
Description based on online resource; title from PDF title page (ebrary, viewed May 5, 2015).
Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
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