Intro -- Silicon Carbide and Related Materials 2021 -- Preface -- Table of Contents -- Chapter 1: Material Growth and Wafer Manufacturing -- Models for Impurity Incorporation during Vapor-Phase Epitaxy -- Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration -- Defect Reduction in Epilayers for SiC Trench MOSFETs by Enhanced Epitaxial Growth -- High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer -- 3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations -- A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality -- The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates -- Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer -- Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers -- Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices -- Advances in 200 mm 4H SiC Wafer Development and Production -- Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates -- Effect of N and Al Doping on 3C-SiC Stacking Faults -- Impact of N Doping on 3C-SiC Defects -- Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding -- In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry -- Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride -- Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide.

Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues -- Interfacial Dislocation Reduction by Optimizing Process Condition in SiC Epitaxy -- Review of Sublimation Growth of SiC Bulk Crystals -- Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers -- Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at Low Temperature < -- 1200�C for Photonic Applications -- SiC Mass Commercialization: Present Status and Barriers to Overcome -- 150 mm SiC Engineered Substrates for High-Voltage Power Devices -- Impact of Surface Emissivity on Crystal Growth and Epitaxial Deposition -- Vanadium Incorporation in 3C-SiC Epilayers and its Consequences for Electrical Properties of 3C-SiC Material -- Opening through 200 mm Silicon Carbide Epitaxy -- Chapter 2: Processing -- Novel Vitrified-Bond Ultra-Fine Grinding Technology for SiC Polishing -- Charge Trapping Mechanisms in Nitridated SiO2/ 4H-SiC MOSFET Interfaces: Threshold Voltage Instability and Interface Chemistry -- Impact of Dislocation on Warpage of Thinned 4H-SiC Wafers -- Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC -- Polish Scratch Simulation vs. Polish Tool Type -- Study of Laser Backside Ohmic Contact Formation of SiC-Ni Interface to Evaluate the Process Influence on the Electrical Characteristics -- Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC -- Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes Using a P2O5 Surface Passivation Treatment -- The Development of Monolithic Silicon Carbide Intracortical Neural Interfaces for Long-Term Human Implantation -- Graphite Assisted P and Al Implanted 4H-SiC Laser Annealing.

A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous Silicon Carbide Layers without Edge Exclusion -- Multiscale Simulations of Plasma Etching in Silicon Carbide Structures -- Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC -- Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation -- Highest Quality and Repeatability for Single Wafer 150mm SiC CMP Designed for High Volume Manufacturing -- Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap -- Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies -- Decoration and Density Increase of Dislocations in PVT-Grown SiC Boules with Post-Growth Thermal Processing -- Chapter 3: Characterization, Modelling and Defect Engineering -- Identification of High Resolution Transient Thermal Network Model for Power Module Packages -- Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends -- Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology -- Evaluation of Defects in a SiC Substrate Using the Photoluminescence Measurement Method -- Effective Method (Selective E-V-C Technique) to Screen out the BPDs that Cause Reliability Degradation -- Optical Characterization of 4H-SiC Thick Epitaxial Layer for Particle Detection -- Automatic Image Analysis of Stackingfault -- Observation of Fast Near-Interface Traps in 4H-SiC MOS Capacitors Using Capacitance Voltage Analysis at Cryogenic Temperatures.

Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis -- Microscopic Evaluation of Al2O3/p-Type Diamond (111) Interfaces Using Scanning Nonlinear Dielectric Microscopy -- Measurement of Dislocation Density in SiC Wafers Using Production XRT -- Computational Study of the Silicon Vacancy in 3C-SiC and Perspectives for Quantum Technologies -- Depth-Resolved Study of the SiO2- SiC Interface Using Low-Energy Muon Spin Rotation Spectroscopy -- Residual Stress Measurement by Raman on Surface-Micromachined Monocrystalline 3C-SiC on Silicon on insulator -- The Improved Reliability Performance of Post-Deposition Annealed ALD-SiO2 -- KPFM - Raman Spectroscopy Coupled Technique for the Characterization of Wide Bandgap Semiconductor Devices -- Surface Potential Fluctuations of SiO2/SiC Interfaces Investigated by Local Capacitance-Voltage Profiling Based on Time-Resolved Scanning Nonlinear Dielectric Microscopy -- 4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method -- Sensitivity of Dit Extraction at the SiO2/SiC Interface Using Quasi-Static Capacitance-Voltage Measurements -- Synchrotron X-Ray Topography Characterization of Power Electronic GaN Materials -- Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography -- Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms -- Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers -- Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC -- Nitrogen Investigation by SIMS in Two Wide Band-Gap Semiconductors: Diamond and Silicon Carbide.

Latest Advances in the Implementation and Characterization of High-K Gate Dielectrics in SiC Power MOSFETs -- Fast Defect Mapping at the SiO2/ SiC Interface Using Confocal Photoluminescence -- Evaluation of Line-Shape Defect in Epitaxial Wafer -- Electrical Scanning Probe Microscopy Investigation of Schottky and Metal-Oxide Junctions on Hetero-Epitaxial 3C-Si(Ns(B on Silicon -- A Deeper Look into the Effects of Extended Defects in SiC Epitaxial Layers on Device Performance and Reliability -- Ni/Heavily-Doped 4H-SiC Schottky Contacts -- Structural and Electrical Characterization of Ni-Based Ohmic Contacts on 4H-SiC Formed by Solid-State Laser Annealing -- Aluminum Acceptor Ionization Energies in 4H-SiC for Low Dose, Ultra-High Energy (> -- 1MeV) Implants -- Structural, Electronic and Optical Properties of 6H-SiC and 3C-SiC with the Application in Solar Cell Devices -- Chapter 4: Power Devices and Applications -- Design and Characterization of 10 kV High Voltage 4H-SiC p-Channel IGBTs with Low VF -- Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton Implantation -- Impact of Recovery Characteristics on Switching Loss of SiC MOSFETs -- Self-Turn-On Phenomenon of SiC MOSFETs by Fast Switching Operation -- Monolithic Integration of Graphene in SiC Radiation Sensors for Harsh-Environment Applications -- Gate Bias Effects on SiC MOSFET Terrestrial-Neutron Single-Event Burnout -- Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO2/6H-SiC MOS Capacitors at 700 K -- Experimental Investigation of a 10 kV-70A Switch with Six SiC-MOSFETs in a Series-Connection Configuration -- Demonstration of 2kV SiC Deep-Implanted Super-Junction PiN Diodes -- AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications -- Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules.

Investigation of SiC Thyristors with Varying Amplifying Gate Design.

Selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021).

Description based on publisher supplied metadata and other sources.

Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.