Nanostructures and Films Based on Classical Wide Gap Semiconductors for Photovoltaic Applications.
By: Opanasyuk, Anatoliy.
Material type: BookSeries: Nanotechnology Science and Technology Series: Publisher: New York : Nova Science Publishers, Incorporated, 2013Copyright date: �2013Edition: 1st ed.Description: 1 online resource (148 pages).Content type: text Media type: computer Carrier type: online resourceISBN: 9781629487632.Genre/Form: Electronic books.Online resources: Click to ViewItem type | Current location | Collection | Call number | Copy number | Status | Date due | Item holds |
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E-book | IUKL Library | Subscripti | 1 | Available |
Intro -- NANOSTRUCTURES AND FILMSBASED ON CLASSICAL WIDEGAP SEMICONDUCTORSFOR PHOTOVOLTAICAPPLICATIONS -- NANOSTRUCTURES AND FILMSBASED ON CLASSICAL WIDEGAP SEMICONDUCTORSFOR PHOTOVOLTAICAPPLICATIONS -- CONTENTS -- PREFACE -- Chapter 1INTRODUCTION -- Chapter 2OPTICAL AND STRUCTURAL PROPERTIESOF A2B6-BASED STRUCTURES -- LOW-TEMPERATURE PHOTOLUMINESCENCE OF II-VIFILMS OBTAINED BY CLOSE-SPACED VACUUMSUBLIMATION [1] -- STRUCTURAL AND OPTICAL PROPERTIES OFVACUUM-DEPOSITED ZNS NANOSTRUCTURES [2] -- STRUCTURAL CHARACTERISTICS OF ZN1-XMNXTEPOLYCRYSTALLINE FILMS [3] -- Chapter 3LED SULFIDE AND MERCURY-CADMIUMZINK-TELLURIDE THIN FILM-BASEDHETEROSTRUCTURES [4] -- CONSTRUCTION OF ENERGY BAND DIAGRAM FOR AHETEROSTRUCTURE N-ZNSE-P-PBS -- ELECTRON SYSTEM PROPERTIES OFSEMICONDUCTOR STRUCTURES BASED ON PBSAND ZNCDHGTE THIN FILMS -- QUASI-TWO-DIMENSIONAL ELECTRON LAYER INZNCDGTE- AND PBS-BASED HETEROSTRUCTURES -- CURRENT-VOLTAGE CHARACTERISTICS OFHETEROSTRUCTURES BASED ON NARROW-GAPSEMICONDUCTOR ZNCDHGTE -- LUMINESCENCE OF QUASI-2DEG INHETEROSTRUCTURES BASED ON PBS FILMS -- TIME STABILITY OF ELECTRICAL CHARACTERISTICSOF HETEROSTRUCTURES N-PBS/N-ZNSE [4] -- CAPACITANCE STUDIES AND CALCULATION OFENERGY BAND DIAGRAM FOR HETEROJUNCTIONZNXCDYHG1-X-YTE/CDTE [4] -- CURRENT-VOLTAGE CHARACTERISTICS OFZNCDHGTE FILMS GROWN BY MODIFIED LIQUIDPHASE TECHNOLOGY [4] -- NUMERICAL MODELING OF ZNCDHGTE THIN FILMSCURRENT-VOLTAGE CHARACTERISTICS FOR LAYERSGROWN BY MODIFIED LIQUID-PHASE EPITAXY [4] -- INFLUENCE OF THE STRUCTURE OF THE EPITAXIALZNCDHGTE FILMS SURFACE ON THEIR CURRENTVOLTAGECHARACTERISTICS [4] -- CAPACITANCE-VOLTAGE PROFILING OFHETEROSTRUCTURES BASED ON EPITAXIALZNCDHGTE LAYERS [4] -- SURFACE STRUCTURE AND ELECTOPHYSICALPROPERTIES OF ZNCDHGTE THIN FILMS PRODUCEDBY PULSED LASER DEPOSITION METHOD ANDMODIFIED LIQUID PHASE EPITAXY [4].
STUDY OF FUNCTIONAL POSSIBILITIES OF ACTIVEELEMENTS BASED ON ZNCDHGTE FILMS OBTAINEDBY LASER TECHNOLOGY [4] -- Chapter 4IMPROVING CONTACTS FOR HIGHEFFECTIVESOLAR CELLS -- SOLAR CELL AS AN OBJECT OF INVESTIGATION -- CU-METALLISATION FROM WATER SOLUTION -- EXPERIMENTAL CU-METALLIZATION -- REFERENCES -- INDEX -- Blank Page.
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Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2024. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
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